Samsung and Qualcomm have once again joined hands for the Snapdragon 835, which will be based on the Samsung’s 10 nm node. This is the third time that Qualcomm and Samsung have collaborated after 14 nm Snapdragon 820 and 821. The 10 nm FinFET node went into production in October and with the node shrink, an increment of 30% area efficiency with 27% higher performance is expected. The smaller footprint will not only help the companies in providing bigger batteries to the users but, will also help in evolving sleek and slim design.
Set to be equipped in the devices in the first half of 2017, we can see it in the Galaxy S8 or other flagships of Samsung. As the number of smartphone explosion is increasing, other than Note 7, there is a probability that manufacturers will opt for the chip with improved power consumption numbers. It is also a sign that Qualcomm will be dropping the Snapdragon 830 moniker for the next flagship until a lower-tier version of the 835 is announced by the company.
Samsung is also working on its own chip named as Exynos and with the 10 nm process in the line it becomes obvious for the company to use the same. But, this is just a speculation, as the company has not given any official statement on the same. Looking at the present scenario, the recent announcement will be fruitful for both the companies as Samsung is looking to expand its roots in the chipset segment and with the recent loss of the company due to Note 7 mishap, it shows a positive sign.
Let’s see how this partnership takes shape and how fast and better smartphones are produced to compete the other tech giants in the market. As Google has also started its new innings with Pixel, it is important for Samsung to drive its product strategy in the most effective manner to sustain the lead.
